• Subtractive & Mold Applications
    • Deep etching of silicon, such as Bosch Process, glass and polymers
    • Embossing mold for silicone imprints
  • Additive Applications
    • High aspect ratio plating for the fabrication of bumps for flip-chip packaging, multi-chip modules, MEMS, sensors, thin-film magnetic heads

Copper coil plated with NR4-8000P mask after resist removal.
Metal (Cu) Thickness = 25µm
Photoresist = Futurrex NR4-8000P


  • Applications
    • Replacement for positive resists in RIE process and general etch applications

Futurrex NR5-8000, 4.5:1 AR
Example of resist resolution
Film thickness: 54µm
Mask dimension: 12µm line/space
Exposure dose: 1100 mJ/cm2.
Focus offset: -15µm.
Exposure tool: Ultratech Stepper Saturn
Model, i-line


  • Applications
    • Facilitation of single-layer lift-off process to pattern metals and dielectrics without RIE
    • Permanent components of devices (i.e. spacers, etc.)

Futurrex NR1-3000PY
Liftoff profile for Negative Resist
NR1-3000PY.
Photoresist Thickness = 3µm.


Negative Etch Resists


Negative Resists - Etch Masking
RIE/Ion Milling
High Temperature Resists
Resist
NR71-250P
NR71-1000P
NR71-1500P
NR71-3000P
NR71-6000P
NR5-8000
Thickness
0.2µm - 0.6µm
0.7µm - 2.1µm
1.1µm - 3.1µm
2.1µm - 6.3µm
5.0µm - 12.2µm
5.8µm - 100µm
Temperature resistance = 150°C.
Selectivities of Futurrex NR5 & NR71 resists in RIE outperform commercial positive-tone resists by 25-33% under certain conditions.
At processing temperatures < 120°C, NR5 and NR71 series resists are strippable at 25°C.
Wet Etch
Enhanced Adhesion
Resist
NR9-250P
NR9-1000P
NR9-1500P
NR9-3000P
NR9-6000P
NR9-8000P
Thickness
0.2µm - 0.6µm
0.7µm - 2.1µm
1.1µm - 3.1µm
2.1µm - 6.3µm
5.0µm - 12.2µm
6.0µm - 100.0µm
Temperature resistance = 100°C.
NR9 series resists offer enhanced adhesion and are easily strippable at 25°C.

  • Applications
    • Replacement for positive resists in RIE processing and wet etching
  • Properties
    • Thickness range: <0.1 - 120.0 µm
    • Sensitivity to wavelengths shorter than 380nm
  • Features
    • superior linewidth control over surface topology
    • straight sidewalls for any film thickness
    • capability to apply 100 µm thick film in a single spin coating
    • shorter bake time due to application of 150°C softbake (critical for thick films)
    • superior photospeed, which enhances exposure throughput
    • facilitates increased power density in RIE boosting etch rate and etch throughput
    • elimination of use of adhesion promoters


Futurrex NR5-8000, 4.5:1 AR
Example of resist resolution
Film thickness: 54µm
Mask dimension: 12µm line/space
Exposure dose: 1100 mJ/cm2.
Focus offset: -15µm.
Exposure tool: Ultratech Stepper Saturn
Model, i-line